ELM55616CA-S Datasheet PDF (Complementary MOSFET)

ELM55616CA-S - Complementary MOSFET

Description

ELM55616CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Features

N-channel.
Vds=60V.
Id=7.0A.
Rds(on) = 34mΩ(Vgs=10V).
Rds(on) = 40mΩ(Vgs=4.5V) http://www. elm-tech. com P-channel.
Vds=-60V.
Id=-7.0A.
Rds(on) = 56mΩ(Vgs=-10V).
Rds(on) = 68mΩ(Vgs=-4.5V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc.

Datasheet Details

Part number	ELM55616CA-S
Manufacturer	ELM
File Size	1.39 MB
Description	Complementary MOSFET
Datasheet	ELM55616CA-S Datasheet
Additional preview pages of the ELM55616CA-S datasheet.

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Full PDF Text Transcription

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Complementary MOSFET (common drain) ■General description ELM55616CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. ELM55616CA-S ■Features N-channel • Vds=60V • Id=7.0A • Rds(on) = 34mΩ(Vgs=10V) • Rds(on) = 40mΩ(Vgs=4.5V) http://www.elm-tech.com P-channel • Vds=-60V • Id=-7.0A • Rds(on) = 56mΩ(Vgs=-10V) • Rds(on) = 68mΩ(Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit 60 -60 V ±20 ±20 V 7.0 -7.0 A 6.0 -6.

Published: Nov 8, 2025 |