EPC EPC2203
Power Transistor
MAXIMUM RATINGS
PARAMETER VDS Drain-to-Source Voltage (Continuous) ID Continuous (TA = 25˚C, RθJA = 314°C/W) Pulsed (25°C, TPULSE = 300 µs) VGS Gate-to-Source Voltage Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE 80 1.7 17 5.75 -4 –40 to 150 –40 to 150 UNIT V A V °C Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction to Case 6.5 RθJB Thermal R