EPC EPC2204
Power Transistor
| Part No. | EPC2204 |
|---|---|
| Datasheet | EPC2204 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT VDS Drain-to-Source Voltage (Continuous) 100 V VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150 °C) 120 Continuous (TA = 25°C) ID Pulsed (25°C, TPULSE = 300 µs) 29 A 125 Gate-to-Source Voltage VGS Gate-to-Source Voltage 6 V -4 TJ Operating Temperature TSTG Storage Temperature -40 to 150 °C -40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 1 RθJB Thermal Resistance, Junction-to-Board 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 64 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. EPC2204 eGaN® FETs are supplied only in passivated die form with solder bars. Die Size: 2.5 x 1.5 mmAPPLICATIONS
● DC-DC Converters● Isolated DC-DC Converters
● Lidar
● Sync rectification for AC-DC and DC-DC
● Point of Load Converters
● USB-C
● Class-D Audio
● LED Lighting
● E-Mobility Benefits
● Ultra High E...
