EPC EPC2206
Power Transistor
| Part No. | EPC2206 |
|---|---|
| Datasheet | EPC2206 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VDS Drain-to-Source Voltage (Continuous) Continuous (TA = 25°C) ID Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE UNIT 80 V 90 A 390 6 V -4 -40 to 150 °C -40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 0.4 RθJB Thermal Resistance, Junction-to-Board 1.1 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 42 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. EPC2206 eGaN® FETs are supplied only in passivated die form with solder bars. Die Size: 6.05 x 2.3 mmAPPLICATIONS
● 48 V Automotive Power● Open Rack Server Architectures
● High Power Density DC-DC Converters
● Isolated Power Supplies
● Class D Audio
● Low Inductance Motor Drive Benefits
● Ultra High Efficiency
● No Reverse Recovery
● Ultra Low QG
● Small Footprint PARAMETER S...
