EPC EPC2212
Power Transistor
| Part No. | EPC2212 |
|---|---|
| Datasheet | EPC2212 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VDS Drain-to-Source Voltage (Continuous) Continuous (TA = 25°C) ID Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE UNIT 100 V 18 A 75 6 V -4 -40 to 150 °C -40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 2 RθJB Thermal Resistance, Junction-to-Board 4 RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 69 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. °C/W Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BVDSS Drain-to-Source Voltage IDSS Drain-Source Leakage VGS = 0 V, ID = 250 μA 100 VDS = 100 V, VGS = 0 V V 10 250 µA Gate-to-Source Forward Leakage VGS = 6 V, TJ = 25°C IGSS Gate-to-Source Forward Leakage# VGS = 6 V, TJ = 125°C Gate-to-Source Reverse Leakage VGS = -4 V 0.005 1.8 m...
