EPC2214 Datasheet PDF

MAXIMUM RATINGS

PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 80 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 96 V ID Continuous (TA = 25°C) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature 10 A 47 6 V -4 –40 to 150 °C –40 to 150 EPC2214 eGaN® FETs are supplied only in passivated die form with solder bumps Die Size: 1.35 mm x 1.35 mm

APPLICATIONS

● Lidar/Pulsed Power

APPLICATIONS

● DC-DC Conversion
● Wireless Power Transfer Benefits
● Ultra High Efficiency
● Ultra Low RDS(on)
● Ultra Low QG
● Ultra Small Footprint PARAMETER Static Characteristics (TJ= 25°C unless otherwise stated) TEST CONDITIONS BVDSS IDSS Drain-to-Source Voltage Drain-Source Leakage VGS = 0 V, ID = 0.2 mA VDS = 64 V, VGS = 0 V, TJ = 25°C IGSS VGS(TH) Gate-to-Source Forward Leakage Gate-to-Source Forward Leakage# Gate-to-Source Reverse Leakage Gate Threshold Voltage VGS = 5 V, TJ = 25°C VGS = 5 V, TJ = 125°C VGS = -4 V, TJ = 25°C VDS = VGS, ID = 2 mA RDS(on) Drain-Source On Resistance VSD Source-Drain Forward Voltage # Defined by design.