• Part: EN29LV800D
  • Description: 8 Megabit Flash Memory Boot Sector Flash Memory
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 0.98 MB
Download EN29LV800D Datasheet PDF
Elite Semiconductor Microelectronics Technology
EN29LV800D
EN29LV800D is 8 Megabit Flash Memory Boot Sector Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
Features - 3.0V, single power supply operation - Minimizes system level power requirements - High performance - Access times as fast as 70 ns - Low power consumption (typical values at 5 MHz) - 9 m A typical active read current - 20 m A typical program/erase current - Less than 1 A current in standby or automatic sleep mode - Flexible Sector Architecture: - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and fifteen 64-Kbyte sectors (byte mode) - One 8-Kword, two 4-Kword, one 16-Kword and fifteen 32-Kword sectors (word mode) - Sector protection : - Hardware locking of sectors to prevent program or erase operations within individual sectors - Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors. - Secured Silicon Sector - Provides a 128-words area for code or data that can be permanently protected. - Once this sector is protected, it is prohibited to program or erase within the sector again. - High performance program/erase speed - Byte/Word program time: 8µs typical - Sector erase time: 100ms typical - Chip erase time: 2s typical - JEDEC Standard program and erase mands - JEDEC standard DATA# polling and toggle bits feature - Single Sector and Chip Erase - Sector Unprotect Mode - Embedded Erase and Program Algorithms - Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode - Support JEDEC mon Flash Interface (CFI) - Low VCC write inhibit < 2.5V - minimum 100K program/erase endurance cycle - Data retention time 20 years - Package Options - 48-pin TSOP (Type 1) - 48 ball 6mm x 8mm TFBGA - Industrial Temperature Range General Description The device is a 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The device features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems. The device...