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EN29LV800D - 8 Megabit Flash Memory Boot Sector Flash Memory

General Description

The device is a 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words.

Any byte can be programmed typically in 8µs.

Key Features

  • 3.0V, single power supply operation - Minimizes system level power requirements.
  • High performance - Access times as fast as 70 ns.
  • Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current - Less than 1 A current in standby or automatic sleep mode.
  • Flexible Sector Architecture: - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and fifteen 64-Kbyte sectors (byte mode) - One 8-Kword, two 4-Kword, one 16-Kword and fiftee.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EN29LV800D (2A) E4N529LV800D (2A) 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only Features  3.