M12L128168A-5BG2S Datasheet 2m X 16 Bit X 4 Banks Synchronous Dram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT SDRAM.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	M12L128168A-5BG2S
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
File Size	785.62 KB
Description	2M x 16 Bit x 4 Banks Synchronous DRAM
Datasheet	M12L128168A-5BG2S M12L128168A Datasheet (PDF)

The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits.

Synchronous design allow

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ) All inputs are sampled at the positive going edge of the system clock Burst Read single write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) M12L128168A (2S) 2M x 16 Bit x 4 Banks Synchronous DRAM.

Part Number	Description
M12L128168A-5BG2N	2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG	2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BVAG2N	Synchronous DRAM
M12L128168A-5BVAG2S	2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BVG2N	Synchronous DRAM
M12L128168A-5BVG2S	2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5TG	2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5TG2N	2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5TG2S	2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5TVAG2N	Synchronous DRAM