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M12L128324A-7BG2E - Synchronous DRAM

Download the M12L128324A-7BG2E datasheet PDF. This datasheet also covers the M12L128324A-5BG2E variant, as both devices belong to the same synchronous dram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (M12L128324A-5BG2E-ESMT.pdf) that lists specifications for multiple related part numbers.

General Description

The M12L128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Overview

ESMT SDRAM.

Key Features

  • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock DQM for masking Auto & self refresh 64ms refresh period (4K cycle) M12L128324A (2E) 1M x 32 Bit x 4 Banks Synchronous DRAM.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M12L128324A-7BG2C 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A-7TG2C 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A-5BG2C 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A-5BG2E Synchronous DRAM
M12L128324A-5TG2C 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A-6BG2C 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128324A-6BG2E Synchronous DRAM
M12L128324A-6TG2C 1M x 32 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG2N 2M x 16 Bit x 4 Banks Synchronous DRAM