M12L2561616A-6BIAG2T Datasheet | Elite Semiconductor Microelectronics Technology

ESMT SDRAM M12L2561616A (2T) Operation Temperature Condition -40°C~105°C 4M x 16 Bit x 4 Banks Synchronous DRAM Features - JEDEC standard 3.3V power supply - LVTTL patible with multiplexed address - Four banks operation - MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ) - All inputs are sampled at the positive going edge of the system clock - Burst Read single write operation - DQM for masking - 16ms refresh period (8K cycle) - If operating ambient temperature > 85℃, the device can not support self refresh function. - All Pb-free products are Ro HS-pliant ORDERING INFORMATION Product ID Max Freq. Package ments M12L2561616A-5TIAG2T 200MHz TSOP II Pb-free M12L2561616A-6TIAG2T 166MHz TSOP II Pb-free M12L2561616A-7TIAG2T 143MHz TSOP II Pb-free M12L2561616A-5BIAG2T 200MHz BGA Pb-free M12L2561616A-6BIAG2T 166MHz BGA Pb-free M12L2561616A-7BIAG2T 143MHz...