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M12L2561616A-6BIAG2T Datasheet

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)
M12L2561616A-6BIAG2T datasheet preview

M12L2561616A-6BIAG2T Details

Part number M12L2561616A-6BIAG2T
Datasheet M12L2561616A-6BIAG2T M12L2561616A-5TIAG2T Datasheet (PDF)
File Size 1.44 MB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 4M x 16 Bit x 4 Banks Synchronous DRAM
M12L2561616A-6BIAG2T page 2 M12L2561616A-6BIAG2T page 3

M12L2561616A-6BIAG2T Overview

The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance...

M12L2561616A-6BIAG2T Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs
  • CAS Latency ( 2 & 3 )
  • Burst Length ( 1, 2, 4, 8 & full page )
  • Burst Type ( Sequential & Interleave )
  • All inputs are sampled at the positive going edge of the system clock
  • Burst Read single write operation
  • DQM for masking

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