• Part: M12L2561616A-6TIG2T
  • Description: 4M x 16 Bit x 4 Banks Synchronous DRAM
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.44 MB
Download M12L2561616A-6TIG2T Datasheet PDF
Elite Semiconductor Microelectronics Technology
M12L2561616A-6TIG2T
M12L2561616A-6TIG2T is 4M x 16 Bit x 4 Banks Synchronous DRAM manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the M12L2561616A-5TIG2T comparator family.
ESMT SDRAM Features - JEDEC standard 3.3V power supply - LVTTL patible with multiplexed address - Four banks operation - MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ) - All inputs are sampled at the positive going edge of the system clock - Burst Read single write operation - DQM for masking - Auto & self refresh - 64ms refresh period (8K cycle) - All Pb-free products are Ro HS-pliant M12L2561616A (2T) Operation Temperature Condition -40°C~85°C 4M x 16 Bit x 4 Banks Synchronous DRAM ORDERING INFORMATION Product ID M12L2561616A-5TIG2T M12L2561616A-6TIG2T M12L2561616A-7TIG2T M12L2561616A-5BIG2T M12L2561616A-6BIG2T M12L2561616A-7BIG2T Max Package ments Freq. 200MHz TSOP II Pb-free 166MHz TSOP II Pb-free 143MHz TSOP II Pb-free 200MHz BGA Pb-free 166MHz...