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M12L64164A-5BG2M

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

M12L64164A-5BG2M datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

This datasheet includes multiple variants, all published together in a single manufacturer document.

M12L64164A-5BG2M datasheet preview

M12L64164A-5BG2M Datasheet Details

Part number M12L64164A-5BG2M
Datasheet M12L64164A-5BG2M M12L64164A-5TG2M Datasheet (PDF)
File Size 1.22 MB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BG2M page 2 M12L64164A-5BG2M page 3

M12L64164A-5BG2M Overview

The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. Synchronous design allows precise cycle controls.

M12L64164A-5BG2M Key Features

  • CAS Latency (2 & 3)
  • Burst Length (1, 2, 4, 8 & full page)
  • Burst Type (Sequential & Interleave) y All inputs are sampled at the positive going edge of the system clock y DQM for m
  • 15.6 μ s refresh interval
ESMT (Elite Semiconductor Microelectronics Technology) logo - Manufacturer

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

View all ESMT (Elite Semiconductor Microelectronics Technology) datasheets

Part Number Description
M12L64164A-5BG2C 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BG2Y 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BIAG2C 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BIG2C 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TG2C 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TG2M 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TG2Y 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TIAG2C 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TIG2C 1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-6BG2C 1M x 16 Bit x 4 Banks Synchronous DRAM

M12L64164A-5BG2M Distributor

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