M13S64164A-5TG2Y Datasheet 1m X 16 Bit X 4 Banks Double Data Rate Sdram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT M13S64164A (2Y) DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	M13S64164A-5TG2Y
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
File Size	1.19 MB
Description	1M x 16 Bit x 4 Banks Double Data Rate SDRAM
Datasheet	M13S64164A-5TG2Y M13S64164A Datasheet (PDF)

z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition z Four bank operation z CAS Latency : 2, 2.5, 3 z Burst Type : Sequential and Interleave z Burst Length : 2, 4, 8 z All inputs except data & DM are sampled at the rising edge of the system clock (CLK) z Data I/O transitions on both edges of data strobe (DQS) z DQS is edge-aligned with data for REA.

Part Number	Description
M13S64164A-5TG2C	1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-5TG	1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-5BG	1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-5BG2Y	1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-4BG2Y	1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-4TG2C	1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-4TG2Y	1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-6BG	1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-6BG2Y	1M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S64164A-6TG	1M x 16 Bit x 4 Banks Double Data Rate SDRAM