M16U4G8512A-QLBG2Z
M16U4G8512A-QLBG2Z is 512 Mb x 8 DDR4 SDRAM manufactured by Elite Semiconductor Microelectronics Technology.
Feature
- Power supply (JEDEC standard 1.2V)
- VDD = VDDQ = 1.2V ± 5%
- VPP = 2.375V to 2.75V
- 16 internal banks
- 4 groups of 4 banks each (x8)
- Differential clock inputs (CK_t and CK_c)
- Bi-directional differential data strobe (DQS_t and
DQS_c)
- Termination Data Strobe is supported (x8 only)
(TDQS_t and TDQS_c)
- Asynchronous reset is supported (RESET_n)
- ZQ calibration for Output driver by pare to external reference resistance (RZQ 240 ohm ±1%)
- Nominal, park and dynamic On-die Termination (ODT)
- DLL aligns DQ and DQS transitions with CK transitions
- mands entered on each positive CK edge
- CAS Latency (CL): 9,11,12,13,14,15,16,18,19,20,21,
22,23,24
- Additive Latency (AL) 0, CL-1, and CL-2 supported
- Burst Length (BL): 8 and 4 with Burst Chop (BC)
- CAS Write Latency (CWL): 9,10,11,12,14,16,18,20
- Refresh cycles
Average refresh period
- 7.8μs at 0°C ≤ TC ≤ +85°C
- 3.9μs at +85°C < TC ≤ +95°C
- Fine granularity refresh is supported
- Adjustable internal generation VREFDQ
- Pseudo Open Drain (POD) interface for data input/output
- Driver strength selected by MRS
M16U4G8512A (2Z)
512 Mb x 8 DDR4 SDRAM
- The high-speed data transfer by the 8 bits prefetch
- Temperature Controlled Refresh (TCR) mode is supported
- Low Power Auto Self Refresh (LP ASR) mode is supported
- Self-refresh abort is supported
- Programmable preamble is supported
- Write leveling is supported
- mand/Address latency (CAL) is supported
- Multipurpose register READ and WRITE capability
- mand Address (CA) Parity for mand/address signal error detect and inform it to...
