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M53D5121632A-6BG Datasheet 8m X16 Bit X 4 Banks Mobile Ddr Sdram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT Mobile DDR SDRAM.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Ba

Key Features

  • JEDEC Standard.
  • Internal pipelined double-data-rate architecture, two data access per clock cycle.
  • Bi-directional data strobe (DQS).
  • No DLL; CLK to DQS is not synchronized.
  • Differential clock inputs (CLK and CLK ).
  • Four bank operation.
  • CAS Latency : 2, 3.
  • Burst Type : Sequential and Interleave.
  • Burst Length : 2, 4, 8, 16.
  • Special function support - PASR (Partial Array Self Refresh) - Internal TCSR (Temperature Compensated Self Refresh) - DS (Dr.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M53D5121632A-5BG 8M x16 Bit x 4 Banks Mobile DDR SDRAM
M53D5121632A-7.5BG 8M x16 Bit x 4 Banks Mobile DDR SDRAM
M53D5121632A 8M x16 Bit x 4 Banks Mobile DDR SDRAM
M53D5123216A 4M x 32Bit x 4 Banks Mobile DDR SDRAM
M53D5123216A-5BG 4M x 32Bit x 4 Banks Mobile DDR SDRAM
M53D5123216A-6BG 4M x 32Bit x 4 Banks Mobile DDR SDRAM
M53D5123216A-7.5BG 4M x 32Bit x 4 Banks Mobile DDR SDRAM
M53D128168A Mobile DDR SDRAM
M53D128324A Mobile DDR SDRAM
M53D1G1664A Mobile DDR SDRAM

M53D5121632A-6BG Distributor