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M53D5121632A - Mobile DDR SDRAM

Description

Ball Name Function A0~A12, BA0~BA1 Address inputs - Row address A0~A12 - Column address A0~A9 A10/AP : AUTO Precharge BA0~BA1 : Bank selects (4 Banks) DQ0~DQ15 Data-in/Data-out RAS CAS WE VSS VDD LDQS, UDQS Row address strobe Column address strobe Write enable Ground Power Bi-directional Data

Features

  • JEDEC Standard.
  • Internal pipelined double-data-rate architecture, two data access per clock cycle.
  • Bi-directional data strobe (DQS).
  • No DLL; CLK to DQS is not synchronized.
  • Differential clock inputs (CLK and CLK ).
  • Four bank operation.
  • CAS Latency : 2, 3.
  • Burst Type : Sequential and Interleave.
  • Burst Length : 2, 4, 8, 16.
  • Special function support - PASR (Partial Array Self Refresh) - Internal TCSR (Temperature Compensated Self Refresh) - DS (Dr.

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Datasheet Details

Part number M53D5121632A
Manufacturer ESMT
File Size 1.66 MB
Description Mobile DDR SDRAM
Datasheet download datasheet M53D5121632A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT Mobile DDR SDRAM Features  JEDEC Standard  Internal pipelined double-data-rate architecture, two data access per clock cycle  Bi-directional data strobe (DQS)  No DLL; CLK to DQS is not synchronized.
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