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M53D5123216A-6BG Datasheet 4m X 32bit X 4 Banks Mobile Ddr Sdram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT Mobile DDR SDRAM.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Ball Name Function A0~A12, BA0~BA1 Address inputs - Row address A0~A12 - Column address A0~A8 A10/AP : AUTO Precharge BA0~BA1 : Bank selects (4 Banks) DQ0~DQ31 Data-in/Data-out RAS CAS WE VSS VDD DQS0~DQS3 Row address strobe Column address strobe Write enable Ground Power Bi-directional Data Strobe.

DQS0 corresponds to the data on DQ0~DQ7;

DQS1 co

Key Features

  • JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized. Differential clock inputs (CLK and CLK ) Four bank operation CAS Latency : 2, 3 Burst Type : Sequential and Interleave Burst Length : 2, 4, 8, 16 Special function support - PASR (Partial Array Self Refresh) - Internal TCSR (Temperature Compensated Self Refresh) - DS (Drive Strength) - Deep Power Down (DPD) Mode M53D5123216A 4M.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M53D5123216A-5BG 4M x 32Bit x 4 Banks Mobile DDR SDRAM
M53D5123216A-7.5BG 4M x 32Bit x 4 Banks Mobile DDR SDRAM
M53D5123216A 4M x 32Bit x 4 Banks Mobile DDR SDRAM
M53D5121632A 8M x16 Bit x 4 Banks Mobile DDR SDRAM
M53D5121632A-5BG 8M x16 Bit x 4 Banks Mobile DDR SDRAM
M53D5121632A-6BG 8M x16 Bit x 4 Banks Mobile DDR SDRAM
M53D5121632A-7.5BG 8M x16 Bit x 4 Banks Mobile DDR SDRAM
M53D128168A Mobile DDR SDRAM
M53D128324A Mobile DDR SDRAM
M53D1G1664A Mobile DDR SDRAM

M53D5123216A-6BG Distributor