M53D5123216A-6BG Datasheet (4M x 32Bit x 4 Banks Mobile DDR SDRAM) | Elite Semiconductor Microelectronics Technology

Part: M53D5123216A-6BG
Manufacturer: Elite Semiconductor Microelectronics Technology
Size: 1.26 MB

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Elite Semiconductor Microelectronics Technology datasheets

M53D5123216A-6BG Description

Ball Name Function A0~A12, BA0~BA1 Address inputs - Row address A0~A12 - Column address A0~A8 A10/AP : Bank selects (4 Banks) DQ0~DQ31 Data-in/Data-out RAS CAS WE VSS VDD DQS0~DQS3 Row address strobe Column address strobe Write enable Ground Power Bi-directional Data Strobe. DQS0 corresponds to the data on DQ0~DQ7;.

M53D5123216A-6BG Key Features

PASR (Partial Array Self Refresh)
Internal TCSR (Temperature pensated Self
DS (Drive Strength)
Deep Power Down (DPD) Mode
Row address A0~A12