M53D5123216A-6BG

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

M53D5123216A-6BG datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

This datasheet includes multiple variants, all published together in a single manufacturer document.

M53D5123216A-6BG Datasheet Details

Part number	M53D5123216A-6BG
Datasheet	M53D5123216A-6BG M53D5123216A Datasheet (PDF)
File Size	1.26 MB
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
Description	4M x 32Bit x 4 Banks Mobile DDR SDRAM

M53D5123216A-6BG Overview

Ball Name Function A0~A12, BA0~BA1 Address inputs - Row address A0~A12 - Column address A0~A8 A10/AP : Bank selects (4 Banks) DQ0~DQ31 Data-in/Data-out RAS CAS WE VSS VDD DQS0~DQS3 Row address strobe Column address strobe Write enable Ground Power Bi-directional Data Strobe. DQS0 corresponds to the data on DQ0~DQ7;.

M53D5123216A-6BG Key Features

PASR (Partial Array Self Refresh)
Internal TCSR (Temperature pensated Self
DS (Drive Strength)
Deep Power Down (DPD) Mode
Row address A0~A12

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M53D5123216A-6BG Datasheet Details

M53D5123216A-6BG Overview

M53D5123216A-6BG Key Features

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

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