2N5471 - P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

Datasheet Details

Part number	2N5471
Manufacturer	ETC
File Size	253.32 KB
Description	P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
Datasheet	2N5471 Datasheet
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2NS471 (SILICON) thru 2NS476 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion mode Junction Field-Effect Transistors designed for general-purpose amplifier and switching applications. • High Gate·Source Breakdown Voltage V(BR)GSS = 40 Vdc (Min) for All Types • High DC Input Resistance IGSS = 100 pAdc (Max) @ VGS = 10 Vdc • Low Reverse Transfer Capacitance Crss = 1.0pF (Max)@VDs=-15Vdc • Tight IDSS Range for Easier Circuit Design • Drain and Source Interchangeable P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS 'MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Power Dissipation @TA = 250 C Derate above 2SoC Operating Channel Temperature Range Storage Temperature Range *Indicates JEDEC Registered Data.

Published: Jul 14, 2018 |