2N5471 datasheet by Unknown Manufacturer.
| Part number | 2N5471 |
|---|---|
| Datasheet | 2N5471-ETC.pdf |
| File Size | 253.32 KB |
| Manufacturer | Unknown Manufacturer |
| Description | P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
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2NS471 (SILICON) thru 2NS476 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion mode Junction Field-Effect Transistors designed for general-purpose amplifier and switching applications. High Gate·Source Breakdown Voltage V(BR)GSS = 40 Vdc (Min) for All Types High DC Input Resistance IGSS = 100 pAdc (Max) @ VGS = 10 Vdc Low Reverse Transfer Capacitance Crss = 1.0pF (Max)@VDs=-15Vdc Tight IDSS Range for Easier...
View all Unknown Manufacturer datasheets
| Part Number | Description |
|---|---|
| 2N5472 | P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
| 2N5473 | P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
| 2N5474 | P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
| 2N5475 | P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
| 2N5476 | P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
| 2N5435 | PNP germanium power switching transistors |
| 2N5436 | PNP germanium power switching transistors |
| 2N5437 | PNP germanium power switching transistors |
| 2N5438 | PNP germanium power switching transistors |
| 2N5439 | PNP germanium power switching transistors |
