2N5471
2N5471 is P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS manufactured by Unknown Manufacturer.
2NS471 (SILICON) thru
2NS476
P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
Depletion mode Junction Field-Effect Transistors designed for general-purpose amplifier and switching applications.
- High Gate- Source Breakdown Voltage V(BR)GSS = 40 Vdc (Min) for All Types
- High DC Input Resistance IGSS = 100 p Adc (Max) @ VGS = 10 Vdc
- Low Reverse Transfer Capacitance Crss = 1.0p F (Max)@VDs=-15Vdc
- Tight IDSS Range for Easier Circuit Design
- Drain and Source Interchangeable
P-CHANNEL
JUNCTION FIELD-EFFECT TRANSISTORS
'MAXIMUM RATINGS Rating
Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Power Dissipation @TA = 250 C
Derate above 2So C Operating Channel Temperature Range Storage Temperature Range
- Indicates JEDEC Registered Data.
Symbol VOG VGSR IGF Po
Tchannel T stg
Value 40 40 10 300 2.0
-65 to +175 -65 to +200
Unit
Vde
Vde m Ade m W m W/o C
°c °c
-18~Irrdc B
SEATING PLANE
.
- _
F _
_t I
~
STYLE 2 PIN 1. SOURCE
2. GATE 3. ORAIN 4....
