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2NS471 (SILICON)
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2NS476
P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
Depletion mode Junction Field-Effect Transistors designed for general-purpose amplifier and switching applications.
• High Gate·Source Breakdown Voltage V(BR)GSS = 40 Vdc (Min) for All Types
• High DC Input Resistance IGSS = 100 pAdc (Max) @ VGS = 10 Vdc
• Low Reverse Transfer Capacitance Crss = 1.0pF (Max)@VDs=-15Vdc
• Tight IDSS Range for Easier Circuit Design • Drain and Source Interchangeable
P-CHANNEL
JUNCTION FIELD-EFFECT TRANSISTORS
'MAXIMUM RATINGS Rating
Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Power Dissipation @TA = 250 C
Derate above 2SoC Operating Channel Temperature Range Storage Temperature Range
*Indicates JEDEC Registered Data.
2N5472 Datasheet
