2N5476 Description
2NS471 (SILICON) thru 2NS476 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion mode Junction Field-Effect Transistors designed for general-purpose amplifier and switching applications. High Gate·Source Breakdown Voltage V(BR)GSS = 40 Vdc (Min) for All Types High DC Input Resistance IGSS = 100 pAdc (Max) @ VGS = 10 Vdc Low Reverse Transfer Capacitance Crss = 1.0pF (Max)@VDs=-15Vdc Tight IDSS Range for Easier...