2N5842 - NPN SILICON RF TRANSISTORS

Download the 2N5842 datasheet PDF. This datasheet also covers the 2N5841 variant, as both devices belong to the same npn silicon rf transistors family and are provided as variant models within a single manufacturer datasheet.

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2N5842 npn silicon rf transistors by Unknown Manufacturer - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N5841-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N5842
Manufacturer	Unknown Manufacturer
File Size	716.19 KB
Description	NPN SILICON RF TRANSISTORS
Datasheet	2N5842 Datasheet

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Other Datasheets by Unknown Manufacturer

Part Number	Description
2N5841	NPN SILICON RF TRANSISTORS
2N5845	NPN SILICON ANNULAR TRANSISTORS
2N5845A	NPN SILICON ANNULAR TRANSISTORS
2N5846	NPN SILICON RF POWER TRANSISTORS
2N5847	NPN SILICON RF POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5841 (SILICON) 2N5842 NPN SILICON RF TRANSISTORS . designed to provide ultra·fast switching times in current· mode circuits at collector currents to 80 mAdc. • High Current·Gain-Bandwidth Product - @ IC = 25 mAdc fT = 2.2 GHz (Min) 2N5841 1.7 GHz (Min) 2N5842 • Low Collector· Base CapacitanceCcb = 1.5 pF (Max) @ VCB = 4.0 Vdc • Fast Non·Saturated Switching Times - @ IC = 30 mAdc Typical Values td(on) = 0.4 ns tr = 0.18 ns td(off)= 0.3 ns tf = 0.20 ns NPN SILICON RF TRANSISTORS f 'MAXIMUM RATINGS Rating COllector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @TC - 25°C Derate above 25°C Operating and Storage Junction Temperature Range • Indicates JEDEC Registered Data.