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2N5841 (SILICON) 2N5842
NPN SILICON RF TRANSISTORS
. designed to provide ultra·fast switching times in current· mode circuits at collector currents to 80 mAdc.
• High Current·Gain-Bandwidth Product - @ IC = 25 mAdc fT = 2.2 GHz (Min) 2N5841 1.7 GHz (Min) 2N5842
• Low Collector· Base CapacitanceCcb = 1.5 pF (Max) @ VCB = 4.0 Vdc
• Fast Non·Saturated Switching Times - @ IC = 30 mAdc Typical Values td(on) = 0.4 ns tr = 0.18 ns td(off)= 0.3 ns tf = 0.20 ns
NPN SILICON RF TRANSISTORS
f
'MAXIMUM RATINGS Rating
COllector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @TC - 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
• Indicates JEDEC Registered Data.