Datasheet Summary
2N5845 (SILICON) 2N5845A
NPN SILICON ANNULAR TRANSISTORS
. designed for high- current saturated switching and core driver applications.
- Fast Switching Times@ IC = 500 mAde ton = 30 ns (Max)
- 2N5845A 40 ns (Max)
- 2N5845 toff = 50 ns (Max)
- 2N5845A 60 ns (Max)
- 2N5845
- High Current Gain
- Bandwidth Product fT = 250 MHz (Min)
- 2N5845A 200 MHz (Min)
- 2N5845
- Low Collector-Emitter Saturation Voltage
- @ IC = 500 mAde VCE(sat) = 0.5 Vdc (Max)
- 2N5845A 0.6 Vdc (Max)
- 2N5845
NPN SILICON SWITCHING TRANSISTORS
- MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous Total Power Dissipation @ TA ::::I 25°C
Derate above...