Datasheet Summary
2N5861 (SILICON)
NPN SILICON ANNULAR MEMORY DRIVER
. designed for medium- current, high- speed switching applications. Ideally suited for ferrite core memory driver circuits.
- Collector- Emitter Breakdown Voltage BVCEO ~ 50 Vdc (Min) @ IC ~ 10 mAdc
- Low Coliector- Emitter Saturation Voltage VCE(sat) ~ 0.5 Vdc (Max) @ IC ~ 500 mAdc
- Low Coliector- Base Capacitance Ccb ~ 7.0 pF (Max) @ VCB ~ 10 Vdc
- Fast Switching Times@ IC ~ 500 mAdc -ton ~ 25 ns (Max) toft ~ 60 ns (Max)
NPN SILICON MEMORY DRIVER
TRANSISTOR
'MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous Total Device Dissipation @TA ::::; 25°C
Derate above...
