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2N5861 (SILICON)
NPN SILICON ANNULAR MEMORY DRIVER
. designed for medium·current, high·speed switching applications. Ideally suited for ferrite core memory driver circuits.
• Collector·Emitter Breakdown Voltage BVCEO ~ 50 Vdc (Min) @ IC ~ 10 mAdc
• Low Coliector·Emitter Saturation Voltage VCE(sat) ~ 0.5 Vdc (Max) @ IC ~ 500 mAdc
• Low Coliector·Base Capacitance Ccb ~ 7.