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2N5864 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
· .. designed for use in general-purpose amplifier and medium-speed switching applications.
• High·Coliector·Emitter Breakdown Voltage-
BVCEO = 70 Vdc (Mini @ IC = 10 mAdc
• DC Current Gain Specified - 10 mA to 500 mA
• High.Coliector Current - IC = 1.5 Adc Continuous
PNPSILICON GENERAL-PURPOSE
TRANSISTOR
'MAXIMUM RATINGS
Rating Collector~Emitter Voltage Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation @ TA = 25°C Derate above 25°C
Total Power Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCB VEB
IC Po
Po
TJ. Tstg
Value 70
90 5.0
1.5 1.25 7.15
8.