Datasheet Summary
2N5864 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
- .. designed for use in general-purpose amplifier and medium-speed switching applications.
- High- Coliector- Emitter Breakdown Voltage-
BVCEO = 70 Vdc (Mini @ IC = 10 mAdc
- DC Current Gain Specified
- 10 mA to 500 mA
- High.Coliector Current
- IC = 1.5 Adc Continuous
PNPSILICON GENERAL-PURPOSE
TRANSISTOR
'MAXIMUM RATINGS
Rating Collector~Emitter Voltage Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Total Power Dissipation @ TA = 25°C Derate above 25°C
Total Power Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCB VEB
IC Po
Po
TJ. Tstg
Value 70
90...
