| Part number | 2N5865 |
|---|---|
| Download | 2N5865 Datasheet (PDF) |
| File Size | 101.55 KB |
| Manufacturer | Unknown Manufacturer |
| Description | PNP SILICON ANNULAR TRANSISTOR |
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| Part Number | Description |
|---|---|
| 2N5861 | NPN SILICON ANNULAR MEMORY DRIVER TRANSISTOR |
| 2N5862 | NPN SILICON RF POWER TRANSISTOR |
| 2N5864 | PNP SILICON ANNULAR TRANSISTOR |
| 2N5800 | SILICON P-CHANNEL JUNCTION FET |
| 2N5835 | NPN SILICON HIGH-FREQUENCY TRANSISTORS |
2N5865 (SILICON) PNP SILICON ANNULAR TRANSISTOR· . designed where high·current, high·voltage conditions are require· ments for general·purpose switching and amplifier applications. Collector·Emitter Breakdown Voltage BVCEO = 50 Vdc (Min) @ IC = 10 mAdc DC Current Gain Specified - 1.0 mA to 500 mA Turn·On Time.
