Datasheet Summary
2N5865 (SILICON)
PNP SILICON ANNULAR TRANSISTOR-
. designed where high- current, high- voltage conditions are require- ments for general- purpose switching and amplifier applications.
- Collector- Emitter Breakdown Voltage BVCEO = 50 Vdc (Min) @ IC = 10 mAdc
- DC Current Gain Specified
- 1.0 mA to 500 mA
- Turn- On Time .. ton = 120 ns (Max) @ IC = 500 mAdc
PNPSILICON GENERAL-PURPOSE
TRANSISTOR
>MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous Total Device Dissipation@TA==2SoC
Derate above 2SoC Total Device Dissipation @TC == 2SoC
Derate above 25°C Operating and Storage Junction
Temperature Range
- Indicates JEDEC...