2N5865 - PNP SILICON ANNULAR TRANSISTOR

Datasheet Details

Part number	2N5865
Manufacturer	Unknown Manufacturer
File Size	101.55 KB
Description	PNP SILICON ANNULAR TRANSISTOR
Datasheet	2N5865 Datasheet

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2N5865 (SILICON) PNP SILICON ANNULAR TRANSISTOR· . designed where high·current, high·voltage conditions are require· ments for general·purpose switching and amplifier applications. • Collector·Emitter Breakdown Voltage BVCEO = 50 Vdc (Min) @ IC = 10 mAdc • DC Current Gain Specified - 1.0 mA to 500 mA • Turn·On Time .. ton = 120 ns (Max) @ IC = 500 mAdc PNPSILICON GENERAL-PURPOSE TRANSISTOR >MAXIMUM RATINGS Rating Collector·Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation@TA==2SoC Derate above 2SoC Total Device Dissipation @TC == 2SoC Derate above 25°C Operating and Storage Junction Temperature Range *Indicates JEDEC Registered Data. Symbol VCEO VCB VEB IC Po Po TJ,Tstg Value 50 70 5.0 1.0 1.25 7.15 7.