Unknown Manufacturer 2N5865
PNP SILICON ANNULAR TRANSISTOR
| Part No. | 2N5865 |
|---|---|
| Datasheet | 2N5865 Download |
| Manufacturer | Unknown Manufacturer |
| Description | PNP SILICON ANNULAR TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Collector●Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation@TA==2SoC Derate above 2SoC Total Device Dissipation @TC == 2SoC Derate above 25°C Operating and Storage Junction Temperature Range *Indicates JEDEC Registered Data. Symbol VCEO VCB VEB IC Po Po TJ,Tstg Value 50 70 5.0 1.0 1.25 7.15 7.0 40●65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/oC Watts mW/oC °c Pm 1 Emitter 2 ,,_ 3 Collector MILLIMETERS DIM MIN MAX A B.B9 9.40 B B.OO B.51 C 6.10 6.60 0 0.406 0.533 E 0.229 3.1B F 0.406 0.4B3 G 4.B3 5.33 H 0.711 0.B64 J 0.737 1.02 K 12.70 L 6.35 M 450 NOM P 1.27 Q 900 NOM R 2.54 INCHES MIN MAX 0.350 0.370 0.315 0.335 0.240 0.260 0.016 0.021 0.009 0.125 0,016 0.019 0.190 0.210 0.02B 0.034 0.029 0.040 0.500 0.250 450 NOM 0.050 900 NOM 0.100 All JEOEC dimensions and notes apply. CASE 79●02 TO●39 2-315 2N5865 (continued) *
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Characteristic Symbol Min...