2SC4977 Overview
Description
Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) - Fast Switching Speed - Collector-Emitter Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 4.0A APPLICATIONS - Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters, DC-DC converter. SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 450 400 8 7 14 2 40 150 -55~150 UNIT V V V A A A W ℃ ℃ SYMBOL Rth j-c PARAMETER isc Website： Free Datasheet INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
