Datasheet Details
| Part number | 2SC4977 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.59 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC4977_INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.
| Part number | 2SC4977 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.59 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC4977_INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 4.0A APPLICATIONS ·Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters, DC-DC converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 450 400 8 7 14 2 40 150 -55~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.125 UNIT ℃/W isc Website：.iscsemi.cn Free Datasheet http://../ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SC4977 MAX UNIT VCEO(SUS) V(BR)CBO V(BR)EBO Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC= 0.1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 2SC4977 | MOLD TYPE BIPOLAR TRANSISTORS | ETC |
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