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2SC4976 - NPN TRANSISTOR

Key Features

  • Package Dimensions unit : mm 2045B [2SA1875 / 2SC4976] 6.5 5.0 4 1.5.
  • High fT : fT=400MHz(typ). High breakdown voltage : VCEO≥200V(min). Large current capacitance. Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=3.4pF(NPN), 4.2pF(PNP). Adoption of FBET process. 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit : mm.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN5507B 2SA1875 / 2SC4976 PNP / NPN Epitaxial Planar Silicon Transistors 2SA1875 / 2SC4976 High-Definition CRT Display Video Output Applications Features • • • • Package Dimensions unit : mm 2045B [2SA1875 / 2SC4976] 6.5 5.0 4 1.5 • High fT : fT=400MHz(typ). High breakdown voltage : VCEO≥200V(min). Large current capacitance. Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=3.4pF(NPN), 4.2pF(PNP). Adoption of FBET process. 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit : mm 2044B [2SA1875 / 2SC4976] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 0.5 0.8 1 0.6 2 3 2.5 1.2 1.2 0 to 0.