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A1810 - Silicon PNP Epitaxial

Features

  • Excellent high frequency characteristics fT = 300 MHz typ.
  • High voltage and low output capacitance VCEO =.
  • 200 V, Cob = 5.0 pF typ.
  • Suitable for wide band video amplifier Outline TO-126 MOD 123 1. Emitter 2. Collector 3. Base 2SA1810 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temper.

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Datasheet Details

Part number A1810
Manufacturer ETC
File Size 31.82 KB
Description Silicon PNP Epitaxial
Datasheet download datasheet A1810 Datasheet
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    Full PDF Text Transcription

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    2SA1810 Silicon PNP Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier Outline TO-126 MOD 123 1. Emitter 2. Collector 3. Base 2SA1810 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC PC * 1 Tj Tstg Ratings –200 –200 –5 –0.2 –0.5 1.
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