Very small-sized package permitting 2SA1813-
applied sets to be made smaller and slimmer.
Adoption of FBET process.
High DC current gain (hFE=500 to 1200).
Low collector-to-emitter saturation voltage
(VCE(sat)≤0.3V).
High VEBO (VEBO≥15V). Package Dimensions
unit:mm 2059A
[2SA1813]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse.
Ordering number:EN3972
PNP Epitaxial Planar Silicon Transistor
2SA1813
Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications
Features
· Very small-sized package permitting 2SA1813-
applied sets to be made smaller and slimmer.
· Adoption of FBET process.
· High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage
(VCE(sat)≤0.3V). · High VEBO (VEBO≥15V).