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BN10(2CN3,BZU1)
GLASS PASSIVATED SILICON DAMPING DIODE
Features: 1. Silicon diffusion mesa. 2. Glass Passivated package. 3. Small volume, light weight. 4. Small high-temperature leakage. 5. Good thermal stability. 6. High reliability. 7. Implementation of standards: QZJ840611
TECHNICAL DATA: Parameter name
Use for Store temperature
Quality Class Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Voltage
Average Forward Voltage
Non-repeat Forward Surge Current
Peak Reverse Current Peak Reverse Current Junction Temperature Reverse Recovery Time
Symbols Unit
T °C
VRRM IF(AV)
VFM
VF
IFSM
IRM1 IRM2 Tjm trr
V A
V
V
A
uA uA °C uS
(Ta = 25°C )
Specifications
Test Condition
Rectifier, damping circuit.
-55~+150
GS
50~1400
1.0
A~G: 1.8 H~J: 2.5
I=AIF(AV),A=3.
BN10 Datasheet
