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GLT41116 - 64k x 16 CMOS Dynamic RAM with Fast Page Mode

General Description

The GLT41116 is a 65,536 x 16 bit high-performance CMOS dynamic random access memory.

The GLT41116 offers Fast Page mode, and has both BYTE WRITE and WORD WRITE access cycles via two CAS pins.

The GLT41116 has symmetric address and accepts 256-cycle refresh in 4ms interval.

Key Features

  • x 65,536 words by 16 bits organization. x Fast access time and cycle time. x Dual CAS input. x Low power dissipation. x Read-Modify-Write, RAS-Only Refresh, CAS-before-RAS Refresh, Hidden Refresh and Test Mode Capability. x 256 refresh cycles per 4ms. x Available in 40-Pin 400 mil SOJ, and 40/44-Pin TSOP (Type II). x Single 5.0V± 10% Power Supply. x All inputs and Outputs are TTL compatible. x Fast Page Mode operation.

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Datasheet Details

Part number GLT41116
Manufacturer Unknown Manufacturer
File Size 106.00 KB
Description 64k x 16 CMOS Dynamic RAM with Fast Page Mode
Datasheet download datasheet GLT41116 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GLT41116 64k x 16 CMOS Dynamic RAM with Fast Page Mode FEATURES x 65,536 words by 16 bits organization. x Fast access time and cycle time. x Dual CAS input. x Low power dissipation. x Read-Modify-Write, RAS-Only Refresh, CAS-before-RAS Refresh, Hidden Refresh and Test Mode Capability. x 256 refresh cycles per 4ms. x Available in 40-Pin 400 mil SOJ, and 40/44-Pin TSOP (Type II). x Single 5.0V± 10% Power Supply. x All inputs and Outputs are TTL compatible. x Fast Page Mode operation. GENERAL DESCRIPTION The GLT41116 is a 65,536 x 16 bit high-performance CMOS dynamic random access memory. The GLT41116 offers Fast Page mode, and has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. The GLT41116 has symmetric address and accepts 256-cycle refresh in 4ms interval.