GLT5640AL16 Datasheet PDF - ETC 4M X 16 CMOS Synchronous Dynamic RAM Specs

GLT5640AL16 - 4M X 16 CMOS Synchronous Dynamic RAM

Datasheet Summary

Description

The GLT5160L16 is a 2-bank x 524288-word x 16-bit Synchronous DRAM, with LVTTL interface.

All inputs and outputs are referenced to the rising edge of CLK.

The GLT5160L16 achieves very high speed data rate up to 166 MHz, and is suitable for main memory or graphic memory in computer systems.

Features

u Single 3.3 V ±0.3 V power supply u Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz u Fully synchronous operation referenced to clock rising edge u Dual bank operation controlled by BA (Bank Address) u CAS latency- 2 / 3 (programmable) u Burst length- 1 / 2 / 4 / 8 & Full Page (programmable) u Burst type- sequential / interleave (programmable) u Industrial grade available u u u.
u.
u u u Byte control by DQMU and DQML Column access - random Auto precharge / All bank precha.

Datasheet Details

Part number	GLT5640AL16
Manufacturer	ETC
File Size	399.85 KB
Description	4M X 16 CMOS Synchronous Dynamic RAM
Datasheet	GLT5640AL16 Datasheet
Additional preview pages of the GLT5640AL16 datasheet.

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Full PDF Text Transcription

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GLT5160L16 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM ADVANCED FEATURES u Single 3.3 V ±0.3 V power supply u Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz u Fully synchronous operation referenced to clock rising edge u Dual bank operation controlled by BA (Bank Address) u CAS latency- 2 / 3 (programmable) u Burst length- 1 / 2 / 4 / 8 & Full Page (programmable) u Burst type- sequential / interleave (programmable) u Industrial grade available u u u • u • u u u Byte control by DQMU and DQML Column access - random Auto precharge / All bank precharge controlled by A[10] Auto refresh and Self refresh 4096 refresh cycles / 64 ms LVTTL Interface 400-mil, 50-Pin Thin Small Outline Package (TSOP II) with 0.8 mm lead pitch u 6.4mmx10.1mm VFBGA package with 0.

Published: Mar 23, 2005 |