IXFN180N10 Description
+150 300 2500 3000 V V V V A A A A mJ J V/ns W °C °C °C °C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source.
IXFN180N10 Key Features
- International standard package
- Encapsulating epoxy meets
- miniBLOC with Aluminium nitride
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance
- Fast intrinsic Rectifier