Datasheet4U Logo Datasheet4U.com

IXFN180N10 - Power MOSFET

Key Features

  • International standard package.
  • Encapsulating epoxy meets UL 94 V-0, flammability classification.
  • miniBLOC with Aluminium nitride isolation.
  • Low RDS (on).

📥 Download Datasheet

Datasheet Details

Part number IXFN180N10
Manufacturer Unknown Manufacturer
File Size 84.33 KB
Description Power MOSFET
Datasheet download datasheet IXFN180N10 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFN180N15P PolarHT HiPerFET Power MOSFET IXYS
IXFN180N07 HiPerFET Power MOSFETs IXYS
IXFN180N20 Power MOSFETs Single Die MOSFET IXYS
IXFN180N25T Power MOSFET IXYS
IXFN100N10S1 HiPerFET Power MOSFETs IXYS Corporation

Other Datasheets by Unknown Manufacturer

Part Number Description
IXFN36N100 Power MOSFET
IXFH10N90 Power MOSFET
IXFH12N90 Power MOSFET
IXFK48N50Q Power MOSFET
IXFM10N90 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet IXFN 180N10 VDSS ID25 RDS(on) = 100 V = 180 A = 8 mΩ trr ≤ 250 ns Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Terminal (current limit) T C = 25 °C; Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 100 100 ± 20 ± 30 180 100 720 180 60 3 5 600 -55 ... +150 150 -55 ...