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IXFN36N100 - Power MOSFET

Key Features

  • International standard packages.
  • miniBLOC, with Aluminium nitride isolation.
  • Low RDS (on).

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Datasheet Details

Part number IXFN36N100
Manufacturer Unknown Manufacturer
File Size 122.63 KB
Description Power MOSFET
Datasheet download datasheet IXFN36N100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFN 36N100 VDSS ID25 RDS(on) = 1000V = 36A = 0.24 Ω D G S S Maximum Ratings 1000 1000 ± 20 ± 30 36 144 36 64 4 5 700 -55 ... +150 150 -55 ...