MJE5980
MJE5980 is HIGH POWER PNP SILICON TRANSISTORS manufactured by Unknown Manufacturer.
2N5980 2N59812N5982(SILICON) MJE5980 MJE5981 MJE5982
HIGH POWER PNP SILICON TRANSISTORS designed for use in general-purpose amplifier and switching applications.
- DC Current Gain Specified to 8 Amperes h FE = 20-120@ IC = 4.0 Adc = 7.0 (Min) @ IC = 8.0 Adc
- Collector-Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min)
- 2N5980, MJE5980 = 60 Vdc (Min)
- 2N5981, MJE5981 = 80 Vdc (Min)
- 2N5982, MJE5982
- High Current Gain
- 8andwidth Product
- f T = 2.0 MHz (Min) @ IC = 500 m Ade
- plements to NPN Transistors
- 2N5983, 2N5984, 2N5985 and MJE5983,MJE5984,MJE5985
- Choice of Packages
- 2N5980 Series
- Case 90 MJE5980 Series
- Case 199
"MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage Collector-Base Voltage
Ve EO Vee
Emitter-Base Voltage
Collector Current
- Continuous Peak
It5ase .IUffent
Total Device Dissipation @Te c 250e Derate above 250e
VEe Ie e
Po
Operating and Storage
TJ, Tstg
Junction Temperature Range
2N5980 MJE5980
40 60
.
- 2N5981...
