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2N5983 2N5984 2N5985(SILICON) MJE5983 MJE5984 MJE5985
HIGH POWER NPN SILICON TRANSISTORS
de~igned for use in general purpose amplifier and switching applications.
• DC Current Gain Specified to 8 Amperes hFE = 20·120@ IC = 4.0 Adc = 7.0 (Min) @ IC = 8.0 Adc
• Collector· Emitter Sustaining Voltage -
VCEO(sus) = 40 Vdc (Min) - 2N5983. MJE5983
= 60 Vdc (Min) - 2N5984. MJE5984 = 80 Vdc (Min) - 2N5985. MJE5985
• High Current Gain - 8andwidth Product fT = 2.0 MHz (Min) @ IC = 500 mAdc
• Complements to PNP Transistors 2N5980. 2N5981. 2N5982 and MJE5980. MJE5981.