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MJE5982 - HIGH POWER PNP SILICON TRANSISTORS

Download the MJE5982 datasheet PDF. This datasheet also covers the MJE5980 variant, as both devices belong to the same high power pnp silicon transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MJE5980-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJE5982
Manufacturer Unknown Manufacturer
File Size 323.30 KB
Description HIGH POWER PNP SILICON TRANSISTORS
Datasheet download datasheet MJE5982 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5980 2N59812N5982(SILICON) MJE5980 MJE5981 MJE5982 HIGH POWER PNP SILICON TRANSISTORS designed for use in general-purpose amplifier and switching applications. • DC Current Gain Specified to 8 Amperes hFE = 20-120@ IC = 4.0 Adc = 7.0 (Min) @ IC = 8.0 Adc • Collector-Emitter Sustaining Voltage VCEO(sus) = 40 Vdc (Min) - 2N5980, MJE5980 = 60 Vdc (Min) - 2N5981, MJE5981 = 80 Vdc (Min) - 2N5982, MJE5982 • High Current Gain - 8andwidth Product - fT = 2.