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RSA6.1U5
Diodes
ESD Protection diode (Silicon Epitaxial Planer)
RSA6.1U5
zApplication ESD Protection
zFeatures 1) Small mold type (SMD6) 2) High reliability
zAbsolute maximum ratings (Ta=25°C) Power dissipation Peak Pulse Power -1(tp=10×1000µs) Peak Pulse Power -2(tp= 8×20µs) Junction temperature Storage temperature
P Ppk-1 Ppk-2 Tj Tstg
200mW 30 W 200 W 150°C -55 to 150°C
zElectrical characteristics (Ta=25°C) (∗Rating of per diode)
Characteristic Symbol Test condition 1 mA 3.0 V 200 mA 1MHz 0V Standard MIN. MAX. 6.10 V 7.20 V 1.0µA 1.25 V 200 pF TYP.
Zener Voltage Vz Iz= Reverse current IR VR= Forward current VF IF= Junction f= Ct capacitance VR= ∗ Zener voltage (Vz) shall be measured at 40ms after loading current.
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RSA6.1U5
Diodes
zExternal dimensions (Unit : mm)
2.9 ±0.