RS8235
RSB12JS2
Diodes
Bi Direction ESD Protection Diode (Silicon Epitaxial Planer)
RSB12JS2 z Application ESD Protection z Features 1) Low capacitance 2) Bi direction 3) Ultra small mold type (EMD6) z Absolute maximum ratings (Ta=25°C) Power dissipation Junction temperature Storage temperature
Pd Tj Tstg
150 m W/Total 150 °C
- 55 to 150 °C z Electrical characteristics (Ta=25°C) (∗Rating of per diode)
Characteristic Zener Voltage Reverse current Junction capacitance Symbol Vz IR Ct Test Condition Iz= VR= f= VR= 5 m A 9V 1MHz 0V Standard MIN. MAX. 9.6 V 14.4 V 0.1µA 1 p F TYP.
∗ Please pay attention to static electricity when handling. ∗ Zener voltage (Vz) shall be measured at 40ms after loading current.
1/3
RSB12JS2
Diodes z External dimensions (Unit : mm)
1.0 ± 0.1
0.5 ± 0.05 0.5
(1)
(3) (2)
(3)
(2)
(1)
0 to 0.1
(4) (5) (6)
(4)
(5)
(6)
0.22 ±0.05
0.13 ± 0.05
(3)…N/C (6)…N/C
1.6 ± 0.1 z Others
Characteristic Equipment position IEC-61000-4-2 Charge discharge Capacitance...
