RS8235KHFD
Features
1) Small surface mounting type. (EMD2) 2) High reliability.
1.2±0.05
1.6±0.1
0.8±0.05
F7
0.3±0.05 0.6±0.1 0.12±0.05
!Construction Silicon epitaxial planar
ROHM : EMD2 EIAJ : SC-79 JEDEC : SOD-523
!Circuit
!Absolute maximum ratings (Ta=25°C)
Parameter Peak pulse power (tp=10×1000µs) Power dissipation Junction temperature Storage temperature Operation temperature Symbol Ppk P Tj Tstg Topr Limits 10 150 150
- 55∼+150
- 55∼+150 Unit W m W °C °C °C
!Electrical characteristics (Ta=25°C)
Parameter Zener voltage Reverse current Junction capacitance Symbol VZ IR Ct Min. 5.780
- - Typ.
- - 30 Max. 7.820 0.5
- Unit V µA p F IZ=1m A VR=3.5V VR=0V, F=1MHz Conditions
∗Zener voltage (Vz) shall be measured at 40ms after loading current.
RSB6.8S
Diodes
!Others
Item Equipment position Criterion IEC-61000-4-2 Charge discharge capacitance Discharge resistamce Repeat by 10 times No erroneous operation Contact In air : 150p F : 330Ω
: ±8k V : ±15k V
!Electrical characteristic curves...
