SKI-FF530 Overview
.. .. 1.0 Ta = 25 Relative luminous intensity ( % ) 0.8 0.6 0.4 0.2 0.0 730 770 810 850 890 930 970 Wavelength λ ( nm ).
Infrared Emitting Diode Which Mounted High Power 850 Nm Ir Chip
| Part number | SKI-FF530 |
|---|---|
| Manufacturer | Unknown Manufacturer |
| File Size | 186.51 KB |
| Description | Infrared emitting diode which mounted high power 850 nm IR CHIP |
| Datasheet | SKI-FF530_ETC.pdf |
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.. .. 1.0 Ta = 25 Relative luminous intensity ( % ) 0.8 0.6 0.4 0.2 0.0 730 770 810 850 890 930 970 Wavelength λ ( nm ).
| Part Number | Description |
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