EVVOSEMI 1SS184
Switching Diodes
| Part No. | 1SS184 |
|---|---|
| Datasheet | 1SS184 Download |
| Manufacturer |  EVVOSEMI |
| Description | Switching Diodes |
| Buy | Stock & Price |
FEATURES
● Low forward voltage :VF(3) = 0.9 V(Typ.)● Fast reverse recovery time:trr = 1.6 ns(Typ.)
● Small Total Capacitance :CT = 0.9pF(Typ.) MARKING: B3 B3 SOT-23 3 1 2 3 1 2
MAXIMUM RATINGS
@Ta=25℃ Parameter Peak Reverse voltage DC Blocking Voltage Average Rectified Output Current Peak forward surge current Power Dissipation Junction Temperature Storage temperature range Symbol VRM VR IO IFM PD TJ TSTG Value 85 80 100 300 150 125 -55 ~ +150 Unit V V mA mA mW ℃ ℃ELECTRICAL CHARACTERISTICS
@Ta=25℃ Parameter Reverse breakdown voltage Forward voltage Reverse voltage leakage current Capacitance between terminals Reverse recovery time Symbol Test conditions VR IR=100μA VF1 IF=1 mA VF2 IF=10mA VF3 IF=100mA IR1 VR=30V IR2 VR=80V CT VR=0V, f=1MHz t rr IF=10mA Min Typ Max Unit 80 V 0.6 V 0.72 V 0.9 1.2 V 0.1 uA 0.5 uA 0.9 3.0 pF 1.6 4.0 ns 1 1SS184 POWER DISSIPATION P D(mW) Fig.1 Power Derating Curve 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta(℃) Fig.3 Forward Characterist...
