EVVOSEMI 2SC3265
NPN Transistors
| Part No. | 2SC3265 |
|---|---|
| Datasheet | 2SC3265 Download |
| Manufacturer |  EVVOSEMI |
| Description | NPN Transistors |
| Buy | Stock & Price |
FEATURES
● High DC current gain● Low saturation voltage
● Complementary to 2SA1298 Transistors 3 2 1.Base 2.Emitter 1 3.Collector
● Simplified outline(SOT-23)
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous Base Current IC 800 mA IB 160 Collector Power Dissipation PC 200 mW Junction Temperature Storage Temperature Range TJ 150 ℃ Tstg -55 to 150●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Collector-base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitter voltage DC current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 VCEO Ic= 10 mA， IB= 0 VEBO IE= 100μA， IC= 0 ICBO VCB= 30 V , IE= 0 IEBO VEB= 5V , IC=0 VCE(...
