EVVOSEMI 2SC4226
NPN Silicon Epitaxial Planar Transistor
| Part No. | 2SC4226 |
|---|---|
| Datasheet | 2SC4226 Download |
| Manufacturer |  EVVOSEMI |
| Description | NPN Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
● Collector Current Capability IC=100mA● Collector Emitter Voltage VCEO=12V 3 2 1.Base 2.Emitter 1 3.Collector
● Simplified outline(SOT-323)
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 20 12 3 100 150 150 -65 to 150●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Insertion Power Gain Noise Figure Feed back Capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 VCEO Ic= 1 mA， IB= 0 VEBO IE= 100μA， IC= 0 ICBO VCB= 10 V , IE= 0 IEBO VEB= 1V , IC=0 VCE(sat) IC=100 mA, IB=10mA VBE(sat) IC=100...
