2SC4226
2SC4226 is NPN Silicon Epitaxial Planar Transistor manufactured by EVVO.
Features
- Collector Current Capability IC=100m A
- Collector Emitter Voltage VCEO=12V
2 1.Base
2.Emitter
3.Collector
- Simplified outline(SOT-323)
- Absolute Maximum Ratings Ta = 25℃
Parameter Collector
- Base Voltage Collector
- Emitter Voltage Emitter
- Base Voltage Collector Current
- Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Rating 20 12 3 100 150 150
-65 to 150
- Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter
- base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base
- emitter saturation voltage DC current gain Insertion Power Gain Noise Figure Feed back Capacitance Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA, IE= 0
VCEO Ic= 1 m A, IB= 0
VEBO IE= 100μA, IC= 0
ICBO VCB= 10 V , IE= 0
IEBO VEB= 1V , IC=0
VCE(sat) IC=100 m A, IB=10m A
VBE(sat) IC=100 m A, IB=10m A h FE VCE= 3V, IC= 7m A
|S21e|2 VCE= 3V, IC= 7m A,f=1GHz
NF VCE= 3V, IC= 7m A,f=1GHz
Cre VCE= 3V, IE=0,f=1MHz f T
VCE= 3V, IC= 7m A
Note.Pulse Measurement ; PW ≤ 350 us, Duty Cycle ≤ 2 % Pulsed.
- Classification of hfe
Type
EV2SC4226-SM EV2SC4226-SM EV2SC4226-SM
Range...