• Part: 2SC4226
  • Description: NPN Silicon Epitaxial Planar Transistor
  • Category: Transistor
  • Manufacturer: EVVO
  • Size: 1.33 MB
Download 2SC4226 Datasheet PDF
EVVO
2SC4226
2SC4226 is NPN Silicon Epitaxial Planar Transistor manufactured by EVVO.
Features - Collector Current Capability IC=100m A - Collector Emitter Voltage VCEO=12V 2 1.Base 2.Emitter 3.Collector - Simplified outline(SOT-323) - Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 20 12 3 100 150 150 -65 to 150 - Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Insertion Power Gain Noise Figure Feed back Capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 μA, IE= 0 VCEO Ic= 1 m A, IB= 0 VEBO IE= 100μA, IC= 0 ICBO VCB= 10 V , IE= 0 IEBO VEB= 1V , IC=0 VCE(sat) IC=100 m A, IB=10m A VBE(sat) IC=100 m A, IB=10m A h FE VCE= 3V, IC= 7m A |S21e|2 VCE= 3V, IC= 7m A,f=1GHz NF VCE= 3V, IC= 7m A,f=1GHz Cre VCE= 3V, IE=0,f=1MHz f T VCE= 3V, IC= 7m A Note.Pulse Measurement ; PW ≤ 350 us, Duty Cycle ≤ 2 % Pulsed. - Classification of hfe Type EV2SC4226-SM EV2SC4226-SM EV2SC4226-SM Range...