2SC4226 Datasheet | Semiware Semiconductor

DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package Plastic-Encapsulate Transistor (NPN) SOT-323 FEATURES Low Noise NF = 1.2 d B TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 m A High Gain |S21e|2= 9.0 d B TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 m A Small Mini Mold Package EIAJ: SC-70 APPROVALS Ro HS pliance with 2011/65/EU HF pliance with IEC61249-2-21:2003 ABSOLUTE MAXIMUM RATINGS Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PT TJ TSTG Value 20 12 3 100 150 150 ‒65 to +150 Unit V V V m A m W ℃ ℃ Product Datasheet Rev. A2.0 1/10 Build Your Design As You Will Http://semiware. Plastic-Encapsulate Transistor (NPN) ELECTRICAL CHARACTERISTICS(TA=25°C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed back Capacitance Insertion Power Gain Noise Figure Test Condition VCB=10 V, IE=0 VEB=1V, IC=0 VCE=3V, IC=7m A- 1 VCE= 3V, IC= 7m A VCE= 3V, IE=0, f=1MHz- 2 VCE=3V, IC=7m A, f =1GHz VCE= 3V, IC=7m A, f =1GHz Symbol ICBO IEBO h FE f T Cre |S21e|2 NF Min. 40 3.0...