DESCRIPTION
@ f = 1 GHz, VCE = 3 V, IC = 7 mA High Gain |S21e|2= 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA Small Mini Mold Package EIAJ: SC-70 APPROVALS RoHS Compliance with 2011/65/EU HF Compliance with IEC61249-2-21:2003 ABSOLUTE MAXIMUM RATINGS
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PT TJ TSTG Value 20 12 3 100 150 150 ‒65 to +150 Unit V V V mA mW ℃ ℃ Product Datasheet Rev. A2.0 1/10 Build Your Design As You Will R 2SC4226 Plastic-Encapsulate Transistor (NPN) ELECTRICAL CHARACTERISTICS
(TA=25°C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed back Capacitance Insertion Power Gain Noise Figure Test Condition VCB=10 V, IE=0 VEB=1V, IC=0 VCE=3V, IC=7mA*1 VCE= 3V, IC= 7mA VCE= 3V, IE=0, f=1MHz*2 VCE=3V, IC=7mA, f =1GHz VCE= 3V, IC=7mA, f =1GHz Symbol ICBO IEBO hFE fT Cre |S21e|2 NF Min.
Semiware
