EVVOSEMI MMBT4401
NPN TRANSISTOR
| Part No. | MMBT4401 |
|---|---|
| Datasheet | MMBT4401 Download |
| Manufacturer |  EVVOSEMI |
| Description | NPN TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Switching TransistorMAXIMUM RATINGS
(Ta=25℃ unless other wise noted) Parameter Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Symbol VCBO VCEO VEBO IC PC RthJA Value 60 40 6 600 300 417 Unit V V V mA mW ℃/W Operation Junction and Storage Temperature Range TJ,Tstg -55~+150 ℃ SOT-23 3 1 2 1.BASE 2.EMITTER 3.COLLECTORELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted.) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time Symbol Test conditions V(BR)CBO V(BR)CEO V(BR)EBO IC = 100uA, IE = 0 IC = 1 mA, IB = 0 IE = 100uA, IC = 0 ICBO ICEX IEBO hFE1 hFE2 hFE3 hFE4 hFE5...
