MMBT4401 Datasheet | EVVO

FEATURES - Switching Transistor MAXIMUM RATINGS (Ta=25℃ unless other wise noted) Parameter Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Symbol VCBO VCEO VEBO IC PC Rth JA Value 60 40 6 600 300 Unit V V V m A m W ℃/W Operation Junction and Storage Temperature Range TJ,Tstg -55~+150 ℃ SOT-23 3 1.BASE 2.EMITTER 3.COLLECTOR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time Symbol Test conditions V(BR)CBO V(BR)CEO V(BR)EBO IC = 100u A, IE = 0 IC = 1 m A, IB = 0 IE = 100u A, IC = 0 ICBO ICEX IEBO h FE1 h FE2 h FE3 h FE4 h FE5 VCB = 50V, IE = 0 VCE = 35V, VEB =0.4V VEB = 5V, IC =0 VCE = 1V, IC=0.1m A VCE = 1V, IC=1m A VCE = 1V, IC=10m A VCE = 1V, IC = 150m A VCE = 2V, IC = 500m A VCE(sat) IC = 150m A, IB = 15m A IC = 500m A, IB = 50m A VBE(sat) f T td tr IC = 150m A, IB = 15m A IC = 500m A, IB = 50m A VCE = 10V, IC = 20m A, f=100MHz VCC=30V,VBE(off)=-2V IC=150m A,IB1=15m A ts VCC = 30V, IC = 150m A tf IB1=IB2=15m A Min Typ Max Unit 0.1 u A 0.1 u...