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ECX10N20
N CHANNEL LATERAL MOSFET
N Channel Lateral Mosfet Designed speci cally for linear audio ampli er applications High-speed for high bandwidth ampli ers Reduced Vds sat High voltage rating - 200V TO-247 plastic package Enhanced oscillation suppression in multi-device applications Complementary P-channel available – ECX10P20
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
VDSS Drain – Source Voltage
200V
VGSS Gate – Source Voltage
+/-14V
ID Continuous Drain Current
8A
IDR Body Drain Diode Current
8A
PD Allowable Power Dissipation* Tcase = 25°C Tch Channel Temperature
125W 150°C
Tstg Storage Temperature Range
-55 to +150°C
*Thermal Resistance, Junction To Case
1.0°C/W
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ECX10N20 Datasheet
