The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
ECX10N20R
N CHANNEL LATERAL MOSFET
N Channel Lateral Mosfet Designed speci cally for linear audio ampli er applications High-speed for high bandwidth ampli ers Reduced Vds sat High voltage rating - 200V TO-247 plastic package Enhanced oscillation suppression in multi-device applications Complementary P-channel available – ECX10P20R
ABSOLUTE MAXIMUM RATINGS
(TC= 25°C unless otherwise stated)
VDSS Drain – Source Voltage
200V
VGSS Gate – Source Voltage
+/-14V
ID Continuous Drain Current
8A
IDR Body Drain Diode Current
8A
PD Allowable Power Dissipation* Tcase = 25°C Tch Channel Temperature
125W 150°C
Tstg Storage Temperature Range
-55 to +150°C
*Thermal Resistance, Junction To Case
0.
ECX10N20R Datasheet
